Pseudodielectric functions of InGaAs alloy films grown on InP
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Abstract
We present room-temperature pseudodielectric function spectra of InxGa1-xAs films grown on (100) InP by solid-source molecular-beam epitaxy. A wet-chemical etching procedure is used to remove overlayers and obtain the best approximation to the bulk dielectric responses of the films. By line shape fitting, we determined the x dependences of the E1 and E1+Δ1 critical-point energies and that of the Δ1 bowing parameter. The results are in good agreement with the predictions of a universal tight-binding model. © 2002 American Institute of Physics.
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Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan</s1></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Materials Research, Tohoku University, Sendai 980-8577</wicri:regionArea><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics, Kyonggi University, Suwon 440-760, Korea</s1></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics, Kyonggi University, Suwon 440-760</wicri:regionArea><wicri:noRegion>Suwon 440-760</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Department of Ceramic Science and Engineering, Changwon National University, Gyeongnam 641-773, Korea</s1></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Ceramic Science and Engineering, Changwon National University, Gyeongnam 641-773</wicri:regionArea><wicri:noRegion>Gyeongnam 641-773</wicri:noRegion></affiliation></author><author><name sortKey="Ihn, Y S" uniqKey="Ihn Y">Y. S. Ihn</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Kim, Y D" uniqKey="Kim Y">Y. D. Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Kim, S J" uniqKey="Kim S">S. J. Kim</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, North Carolina State University, Raleigh, North Carolina 27606</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Department of Physics, North Carolina State University, Raleigh</wicri:cityArea></affiliation></author><author><name sortKey="Aspnes, D E" uniqKey="Aspnes D">D. E. Aspnes</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, North Carolina State University, Raleigh, North Carolina 27606</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Department of Physics, North Carolina State University, Raleigh</wicri:cityArea></affiliation></author><author><name sortKey="Yao, T" uniqKey="Yao T">T. Yao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Shim, K" uniqKey="Shim K">K. Shim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Koo, B H" uniqKey="Koo B">B. H. Koo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0462363</idno><date when="2002-09-23">2002-09-23</date><idno type="stanalyst">PASCAL 02-0462363 AIP</idno><idno type="RBID">Pascal:02-0462363</idno><idno type="wicri:Area/Main/Corpus">00E907</idno><idno type="wicri:Area/Main/Repository">00DE32</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Dielectric function</term><term>Etching</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Molecular beam epitaxy</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Tight-binding calculations</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7145G</term><term>7361E</term><term>7866F</term><term>7820C</term><term>8165C</term><term>8115H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Couche épitaxique semiconductrice</term><term>Epitaxie jet moléculaire</term><term>Croissance semiconducteur</term><term>Fonction diélectrique</term><term>Gravure</term><term>Calcul liaison forte</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We present room-temperature pseudodielectric function spectra of In<sub>x</sub>Ga<sub>1-x</sub>As films grown on (100) InP by solid-source molecular-beam epitaxy. A wet-chemical etching procedure is used to remove overlayers and obtain the best approximation to the bulk dielectric responses of the films. By line shape fitting, we determined the x dependences of the E<sub>1</sub> and E<sub>1</sub>+Δ<sub>1</sub> critical-point energies and that of the Δ<sub>1</sub> bowing parameter. The results are in good agreement with the predictions of a universal tight-binding model. © 2002 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>81</s2></fA05><fA06><s2>13</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Pseudodielectric functions of InGaAs alloy films grown on InP</s1></fA08><fA11 i1="01" i2="1"><s1>KIM (T. J.)</s1></fA11><fA11 i1="02" i2="1"><s1>IHN (Y. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>KIM (Y. D.)</s1></fA11><fA11 i1="04" i2="1"><s1>KIM (S. J.)</s1></fA11><fA11 i1="05" i2="1"><s1>ASPNES (D. E.)</s1></fA11><fA11 i1="06" i2="1"><s1>YAO (T.)</s1></fA11><fA11 i1="07" i2="1"><s1>SHIM (K.)</s1></fA11><fA11 i1="08" i2="1"><s1>KOO (B. H.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, North Carolina State University, Raleigh, North Carolina 27606</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan</s1></fA14><fA14 i1="04"><s1>Department of Physics, Kyonggi University, Suwon 440-760, Korea</s1></fA14><fA14 i1="05"><s1>Department of Ceramic Science and Engineering, Changwon National University, Gyeongnam 641-773, Korea</s1></fA14><fA20><s1>2367-2369</s1></fA20><fA21><s1>2002-09-23</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0462363</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We present room-temperature pseudodielectric function spectra of In<sub>x</sub>Ga<sub>1-x</sub>As films grown on (100) InP by solid-source molecular-beam epitaxy. A wet-chemical etching procedure is used to remove overlayers and obtain the best approximation to the bulk dielectric responses of the films. By line shape fitting, we determined the x dependences of the E<sub>1</sub> and E<sub>1</sub>+Δ<sub>1</sub> critical-point energies and that of the Δ<sub>1</sub> bowing parameter. 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